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VE2220K122R017_Datasheet PDF

时间:2021-06-14 01:14:56 来源:网络整理编辑:Stellar Labs


Trellis Algebra is based on the electroholographic optical switch, a wavelength-selective switch developed by Trellis Photonics. An array of electroholographic single-wavelength switching devices forms the optical module that is the basic building block in Trellis' Intelligent Lambda Switch.

Trellis Algebra is based on the electroholographic optical switch, a wavelength-selective switch developed by Trellis Photonics. An array of electroholographic single-wavelength switching devices forms the optical module that is the basic building block in Trellis' Intelligent Lambda Switch.

The mobile industry needs to build smaller, lighter, and thinner phones. This contributes to the escalation of fabs. TSMC, GlobalFoundries, Intel, and Samsung will be the high rollers spending $5 billion on average per fab to manufacture the 10 nm projects.

How long will it take, and how many mobile devices will need to be sold to make a return? Assuming the four giants will build six fabs in total, that’d be $30 billion in capital expenditure. Conservatively, if capex depreciation accounts for 15% of the total cost of goods sold (COGS) over the period of the fab, then it means $200 billion dollars worth of wafers will need to be manufactured, mostly for baseband and application processors.

VE2220K122R017_Datasheet PDF

At an average of $40 per mobile phone sold, my back-of-envelope calculation says we are about to produce 50 billion phones. Is it possible? One has to be an optimist to be in the technology business. But even if we can accept this on faith, the issue remains: What happens after the initial two to three years of smartphone use?

The semiconductor industry has benefited from a series of new market adoptions, from military and government to computing to the Internet and now to the mobile phone.

The commoditization and miniaturization have meant escalation of fab cost in order to meet such requirements. I am highly confident that we will continue to find new ways to use semiconductors to enrich our lives.

VE2220K122R017_Datasheet PDF

Whether enough new markets require the 10 nm fabs is what I’m wondering. The optimistic me says that, for example, because we haven’t truly accounted for the cost of energy and environment, the miniaturization movement has focused on convenience and not on conservation. So the cloud side will surely need to catch up, especially with the industrial side of the Internet of Things.

But the worried side of me recalls an old and Euro-centric but still relevant book by Paul Kennedy, The Rise and Fall of the Great Powers. It basically says that great powers fall because they overstretch their economies in unprofitable investments under false assumptions.

VE2220K122R017_Datasheet PDF

Wireless connectivity, both in its 802.11b and its Bluetooth incarnations, got a shot in the arm this week with Compaq Computer's rollout of a new family of computers called Evo, integrated with a cleverly designed MultiPort slot on the back of the notebook display panel

Users can now easily slide in a newly developed wireless connectivity module, based on either 802.11b or Bluetooth, with antenna and radio in a single assembly, without concerns for RF interference, according to Compaq.

The optimal composition of the buffer layer with 50% Ti prevents theformation of a passivation layer of aluminum or titanium oxide forming on the surface of the buffer. This prevents the oxygen for the redox process from reaching the surface of the copper electrode, leaving metal particles at that surface which in turn act to limit set time. Minimizing the write time is essential if this device has to have any claims as a memory or logic device. By optimizing the buffer composition, write times of 10ns are claimed with the switching speed, starting at about 1 sec for 1.5volts and falling to 10ns at 2Volts for a value of 56mV/decade, with a write currents in the range 300 to 500 micro-Amps. The write/erase cycle endurance was reported as just over 1000 cycles, so clearly more work to be done in that respect. For evaluation, a 1Mb memory array was fabricated. Stress testing indicates a projected data retention of 10 years at 125 deg.C. One of the extremely important results from this work is a claim that the memory devices do not require forming, and the first switching event is the same as all subsequent switching events.

ConclusionSlowly, a more complete understanding of the variables and details of the operation of RRAMs and filament formation in many different types of memory device and materials is becoming clearer. The fact that there appear to be so many promising RRAM and ReRAM technologies may be a problem as well as an opportunity.

My view is rather than promise what is needed, all of those throwing their proverbial hats into the ring should use the information they have to provide a memory cell design that could be monolithically integrated into a 8Gb memory array, for example, and define the performance. At the moment, it is this writer’s view that it might be better if emerging NV memory focused not on mass memory and bit density but on providing memory designs and solutions for the single-chip embedded memory business. That is where it now appears there is an opportunity for game-changing memory success.

References1. Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement, Y. Meng, X. Y. Xue, Y. L. Song, J. G. Yang, B. A. Chen, Y. Y. Lin*, ASIC and System State Key Laboratory, Fudan University, Shanghai, 201203, China; Q. T. Zou, R. Huang, J. G. WuTechnology Development Center, Semiconductor Manufacturing International Corp., Shanghai, 201203, China. 2. Role of the Ta scavenger electrode in the excellent switching control and reliability of ascalable low-current operated TiN\Ta2O5\Ta RRAM device,L. Goux1*, A. Fantini1, A. Redolfi1, C.Y. Chen, F.F. Shi, R. Degraeve1, Y.Y. Chen1, T. Witters1, G. Groeseneken, M. Jurczak1imec, Kapeldreef 75, B-3001 Leuven, Belgium; 2 KU Leuven, Belgium. 3. Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants, Y. Y. Chen, R. Roelofs*, A. Redolfi, R. Degraeve, D. Crotti, A. Fantini, S. Clima, B. Govoreanu, M. Komura**, L. Goux, L. Zhang***, A. Belmonte****, Q. Xie*, J. Maes*, G. Pourtois and M. Jurczakimec, Kapeldreef 75, B3001, Leuven, Belgium; *ASM international, Belgium; **Toshiba assignee in imec,***also with Dept. of Electrical Engineering (ESAT), KU Leuven, Belgium; ****also with Dept. of Physics & Astronomy, KU Leuven, Belgium. 4. A Fast and Low-Voltage Cu Complementary-Atom-Switch 1Mb Array with High-Temperature Retention, N. Banno, M.Tada, T. Sakamoto, M. Miyamura, K. Okamoto, N. Iguchi, T. Nohisa, and H. HadaLow-power Electronics Association & Project (LEAP), West 7A, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan.

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